DocumentCode
2872409
Title
1550nm pulsed operation of a GaInNAsSb VCSEL
Author
Laurand, Nicolas ; Calvez, S. ; Dawson, M.D. ; Gupta, J.A. ; Aers, G.C.
Author_Institution
Inst. Of Photonics, Univ. of Strathclyde, Glasgow
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
The 1.55 mum pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface emitting laser (VCSEL) is reported. Full temperature (10-50degC) and wavelength-dependent (1540-1560 nm) laser measurements were recorded. The annealing effect on laser performance is also shown.
Keywords
III-V semiconductors; annealing; arsenic compounds; gallium compounds; indium compounds; optical pumping; surface emitting lasers; GaInNAsSb; VCSEL; annealing effect; optical pumping; pulsed operation; temperature 10 degC to 50 degC; vertical cavity surface emitting laser; wavelength 1550 nm; Distributed Bragg reflectors; Laser theory; Optical pulses; Optical pumping; Optical recording; Semiconductor lasers; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Wavelength measurement; (140.3600) Lasers, Tunable; (140.5960) Semiconductor lasers; (160.6000) Semiconductors, including MQW;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628313
Filename
4628313
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