Low-threshold continuous-wave 1.55-μm GaInNAsSb lasers

Author

Bank, S.R. ; Bae, H.P. ; Yuen, H.B. ; Wistey, M.A. ; Goddard, L.L. ; Harris, J.S., Jr. ; Kudrawiec, R. ; Gladysiewicz, M. ; Motyka, M. ; Misiewicz, And J.

Author_Institution

Solid State & Photonics Lab., Stanford Univ., Stanford, CA

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

We present the first low-threshold 1.55-mum grown on GaAs. The active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers. The room-temperature, continuous-wave, threshold current density was 579 A/cm² and peak output power was 130 mW.

Keywords

gallium arsenide; gallium compounds; indium compounds; laser beams; optical materials; quantum well lasers; semiconductor growth; GaInNAsSb-GaAs; active layer growth; continuous-wave laser threshold current density; low-threshold single quantum well laser; power 130 mW; strain-compensation barriers; wavelength 1.55 mum; Fiber lasers; Gallium arsenide; Laser theory; Molecular beam epitaxial growth; Nitrogen; Power generation; Semiconductor lasers; Solid lasers; Temperature; Threshold current; (060.2380) Fiber optics sources and detectors; (140.5960) Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628314

Filename

4628314