DocumentCode
2872445
Title
Process simulation in two dimensions
Author
Penumalli, B.
Author_Institution
Bell Laboratories, Murray Hill, NJ, USA
Volume
XXIV
fYear
1981
fDate
18-20 Feb. 1981
Firstpage
212
Lastpage
213
Abstract
Numerical simulation of the redistribution of impurities near a mask edge under general processing conditions will be described. The simulation by itself and in conjunction with two-dimensional device analysis programs has been found to be a useful tool in understanding the lateral effects in small geometry VLSI devices.
Keywords
Difference equations; Doping profiles; Impurities; Integrated circuit modeling; Nonlinear equations; Oxidation; Publishing; Semiconductor process modeling; Silicon; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1981.1156234
Filename
1156234
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