DocumentCode
2872774
Title
A dual-gate floating-gate FET device
Author
Kotecha, H. ; Chung Lam
Author_Institution
IBM General Technology Division, Essex Junction, VT, USA
Volume
XXIV
fYear
1981
fDate
18-20 Feb. 1981
Firstpage
38
Lastpage
39
Abstract
An experimental floating-gate FET with two capacitively-coupled control gates for nonvolatile and electrically alterable application will be discussed. An enhanced conduction insulator under one control gate serves to charge/discharge the floating gate.
Keywords
Dielectric substrates; FETs; Insulation; Physics; Power system reliability; Solid state circuits; Switched capacitor networks; Threshold voltage; Tunneling; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1981.1156253
Filename
1156253
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