A simple equivalent circuit model CMOS multi-level spiral inductors

This paper presents a simple structure equivalent circuit model for multi-level spiral inductor on silicon substrates. Skin effect and proximity effect are well modeled by additional RL branch and mutual inductance. For multi-level inductors, since all metal wires couple laterally to each other through the substrate, coupling between wires and between metal layers can be modeled by a parallel combination of resistance and capacitance. Verification with measurement data from a series of multi-level spiral inductors in 2P4M Si process demonstrates accurate performance over wide band frequency range.