DocumentCode :
2872903
Title :
Recent developments in N2O- and NO-based oxynitride dielectrics for cmos ulsi applications
Author :
Bhat, M. ; Han, L.K. ; Yoon, G.W. ; Yan, J. ; Kwong, D.L.
Author_Institution :
The University of Texas at Austin
fYear :
1994
fDate :
1994
Firstpage :
36892
Lastpage :
37987
Keywords :
Application software; Boron; Chemicals; Design for quality; Dielectrics; Hot carriers; Kinetic theory; Oxidation; Silicon; Ultra large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771100
Filename :
771100
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2872903
بازگشت