Forming a rounded etched profile by using two-step anisotropic wet etching

Author

Shikida, Mitsuhiro ; Kawasaki, Koji ; Sat, Kazuo

Author_Institution

Dept. of Microsyst., Nagoya Univ., Japan

fYear

2000

fDate

2000

Firstpage

95

Lastpage

100

Abstract

We used a numerical simulation system to investigate the use of chemical anisotropic etching to fabricate diaphragm structures with a rounded profile at the edge. The rounded-shape was formed by using a two-step KOH etching procedure. The etched profiles were categorized into five types and their shapes were determined by three parameters: the first etching depth, the second etching depth, and mask offset between the first and second etching steps. According to the simulation results, we made a rounded concaved shape at the periphery of a diaphragm structure in order to reduce the concentration of stress there

Keywords

diaphragms; etching; micromachining; semiconductor process modelling; KOH etching; MEMS fabrication; Si; chemical anisotropic etching; diaphragm structures; first etching depth; mask offset; numerical simulation system; reduced stress concentration; rounded concaved shape; rounded etched profile formation; second etching depth; two-step anisotropic wet etching; Acceleration; Anisotropic magnetoresistance; Crystallography; Guidelines; Micromechanical devices; Numerical simulation; Shape control; Stress; Structural beams; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Micromechatronics and Human Science, 2000. MHS 2000. Proceedings of 2000 International Symposium on

Conference_Location

Nagoya

Print_ISBN

0-7803-6498-8

Type

conf

DOI

10.1109/MHS.2000.903297

Filename

903297