Reusing basic semiconductor region models in power device bond graph definition

The authors have developed a new device modelling frame based upon bond graphs and state-variable modelling. The bond graph techniques allow one to take full advantage of the classical regional hypothesis that points out particular basic semiconductor regions, i.e, space-charge regions, high-level injection region, etc. The procedure derives separately the different basic semiconductor region models. Then power device modelling consists in assembling these different basic region models to achieve a bond graph. The power device (Pin-diode, MOS and BJT transistors) bond graphs are made of the same basic semiconductor region models. The preliminary circuit simulation results show good accuracy. The modular property of the method allows simple and efficient developments and improvements