Title :
GaAs power FET for K-band operation
Author :
Macksey, H. ; Hua Tserng ; Nelson, Scott
Author_Institution :
Texas Instruments, Inc., Dallas, TX, USA
Abstract :
A report on a 1.35mm gatewidth GaAs power FET that has produced 675mW with 5.8dB gain at 20.5GHz as an amplifier and 200mW at 25GHz as an oscillator, will be presented.
Keywords :
Bonding; FETs; Gallium arsenide; Grounding; Inductance; Integrated circuit interconnections; K-band; Microwave devices; Power amplifiers; Power generation;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1981 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1981.1156271
