DocumentCode
287303
Title
A physically-based lumped-charge P-ν-N diode model
Author
Ma, C.L. ; Lauritzen, P.O. ; Lin, P.Y.
Author_Institution
Washington Univ., Seattle, WA, USA
fYear
1993
fDate
13-16 Sep 1993
Firstpage
23
Abstract
The P-v-N diode model is developed systematically from fundamental device equations using the lumped-charge modeling technique. The model includes basic DC and transient characteristics of the diode, such as low and high level injection, end region recombination, forward and reverse recovery. Twelve relatively simple model equations provide static and dynamic information on electron and hole charges, currents and voltages at five different regions inside a discretized device structure. Simple parameter extraction is a unique feature
Keywords
power electronics; semiconductor device models; semiconductor diodes; DC characteristics; P-v-N diode model; conductivity modulation; discretized device structure; electron charge; end region recombination; forward recovery; high level injection; hole charges; low level injection; lumped charge model; parameter extraction; reverse recovery; transient characteristics;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location
Brighton
Type
conf
Filename
265016
Link To Document