A measurement test-set for characterisation of high power LDMOS transistors including memory effects

Author

Alghanim, Abdurrahman ; Benedikt, Johannes ; Tasker, Paul

Author_Institution

Sch. of Eng., Cardiff Univ., UK

fYear

2005

fDate

5-6 Sept. 2005

Firstpage

29

Lastpage

32

Abstract

The paper presents a test-set enabling precise measurement of all signal components generated by a modulated stimulus, hence allowing for device characterisations relevant for communication systems. The presented test-set utilises two different types of coupler networks to detect the fundamental and harmonic signal components, and the IF signal components, respectively. Furthermore, the test-set is capable of handling power levels above 100 W making it applicable to devices relevant for the basestation market.

Keywords

harmonic generation; modulation; power MOSFET; semiconductor device testing; signal detection; 100 W; IF signal component; communication system; coupler network; device characterisation; harmonic signal component detection; high power LDMOS transistor; memory effect; precise measurement test-set; stimulus modulation; Bandwidth; Directional couplers; Power generation; Power measurement; RF signals; Radio frequency; Signal detection; Signal generators; System testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Frequency Postgraduate Student Colloquium, 2005

Print_ISBN

0-7803-9500-X

Type

conf

DOI

10.1109/HFPSC.2005.1566354

Filename

1566354