DocumentCode :
2873042
Title :
A measurement test-set for characterisation of high power LDMOS transistors including memory effects
Author :
Alghanim, Abdurrahman ; Benedikt, Johannes ; Tasker, Paul
Author_Institution :
Sch. of Eng., Cardiff Univ., UK
fYear :
2005
fDate :
5-6 Sept. 2005
Firstpage :
29
Lastpage :
32
Abstract :
The paper presents a test-set enabling precise measurement of all signal components generated by a modulated stimulus, hence allowing for device characterisations relevant for communication systems. The presented test-set utilises two different types of coupler networks to detect the fundamental and harmonic signal components, and the IF signal components, respectively. Furthermore, the test-set is capable of handling power levels above 100 W making it applicable to devices relevant for the basestation market.
Keywords :
harmonic generation; modulation; power MOSFET; semiconductor device testing; signal detection; 100 W; IF signal component; communication system; coupler network; device characterisation; harmonic signal component detection; high power LDMOS transistor; memory effect; precise measurement test-set; stimulus modulation; Bandwidth; Directional couplers; Power generation; Power measurement; RF signals; Radio frequency; Signal detection; Signal generators; System testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Frequency Postgraduate Student Colloquium, 2005
Print_ISBN :
0-7803-9500-X
Type :
conf
DOI :
10.1109/HFPSC.2005.1566354
Filename :
1566354
Link To Document :
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