Title :
450 V 30 A bipolar power transistor with two levels of metallisation
Author :
Hazard, P. ; Sebille, D. ; Senes, A.
Author_Institution :
Telemecanique, Nanterre, France
Abstract :
A 450 V 30 A n-p-n transistor dedicated to a DC contactor breaker is presented. At a forced gain of 10, it features a voltage drop of 0.5 V at 30 A. The turn off capability is 50 A under 800 V (VCB0) by using a dedicated drive. A two-layer metallisation has been developed in order to achieve this device. The structure has a fine emitter pitch. A fully brazed packaging is used to improve the surge behaviour and to decrease the stray inductance
Keywords :
bipolar transistors; metallisation; packaging; power transistors; semiconductor switches; 30 A; 450 V; 50 A; 800 V; DC contactor breaker; NPN device; bipolar power transistor; brazed packaging; fine emitter pitch; n-p-n transistor; stray inductance; surge behaviour; two level metallisation;
Conference_Titel :
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location :
Brighton
