Title :
InP HBT technology for high frequency applications
Author :
Craig, V. ; Burns, G. ; Oxland, R. ; Wasige, E.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Abstract :
The development of a new process for fabricating transferred substrate heterojunction bipolar transistors is discussed, in which the emitter contact resistance is kept low in spite of submicron dimensions, thus achieving a device free from scaling limits.
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; phosphorus compounds; photolithography; semiconductor device manufacture; HBT technology; InP; emitter contact resistance; heterojunction bipolar transistor substrate; high frequency application; Bandwidth; Capacitance; Contact resistance; Cutoff frequency; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Nanoelectronics; Ohmic contacts; Substrates;
Conference_Titel :
High Frequency Postgraduate Student Colloquium, 2005
Print_ISBN :
0-7803-9500-X
DOI :
10.1109/HFPSC.2005.1566359
