DocumentCode
2873118
Title
InP HBT technology for high frequency applications
Author
Craig, V. ; Burns, G. ; Oxland, R. ; Wasige, E.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
2005
fDate
5-6 Sept. 2005
Firstpage
47
Lastpage
49
Abstract
The development of a new process for fabricating transferred substrate heterojunction bipolar transistors is discussed, in which the emitter contact resistance is kept low in spite of submicron dimensions, thus achieving a device free from scaling limits.
Keywords
III-V semiconductors; heterojunction bipolar transistors; indium compounds; phosphorus compounds; photolithography; semiconductor device manufacture; HBT technology; InP; emitter contact resistance; heterojunction bipolar transistor substrate; high frequency application; Bandwidth; Capacitance; Contact resistance; Cutoff frequency; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Nanoelectronics; Ohmic contacts; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
High Frequency Postgraduate Student Colloquium, 2005
Print_ISBN
0-7803-9500-X
Type
conf
DOI
10.1109/HFPSC.2005.1566359
Filename
1566359
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