Analysis of switching behavior of the power insulated gate bipolar transistor by soft modeling

A soft modeling method of the power insulated gate bipolar transistor (IGBT) has been developed. The model described (also called `soft model´) is based on simplified one-dimensional semiconductor physics and is suitable for commutation analysis. The soft model is a quantitative method for studying component switching performance and is intended to help the power electronics engineer to make the best use of the device. The inductive load switch-off behavior is presented as an example of the results and the authors show the influence of the drive (R_g,V_g) for a given load condition and that of the load circuit (I_L,V_L) for a given drive on the switching times and losses