DocumentCode
2873258
Title
GHz operation of bipolar cascade VCSELs
Author
Siskaninetz, W.J. ; Ehret, J.E. ; Lott, J.A. ; Nelson, T.R., Jr.
Author_Institution
Sensors Directorate, Wright-Patterson AFB, OH
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
We report GHz modulation of bipolar cascade VCSELs. The VCSELs incorporate a reverse-biased tunnel junction and p-doped oxide aperture for each triple-quantum well active region. These devices exhibit frequency responses greater than 4 GHz.
Keywords
III-V semiconductors; frequency modulation; gallium arsenide; laser cavity resonators; quantum well lasers; surface emitting lasers; GaAs; bipolar cascade VCSELs; frequency response; gigahertz modulation; high-frequency modulation; p-doped oxide aperture; reverse-biased tunnel junction; triple-quantum well active region; vertical cavity surface emitting lasers; Apertures; Force sensors; Frequency response; Gallium arsenide; Laboratories; Quantum cascade lasers; Quantum well lasers; Radio frequency; Surface emitting lasers; Vertical cavity surface emitting lasers; 250.7260 Vertical Cavity Surface Emitting Lasers; 250.7270 Vertical Emitting Lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628365
Filename
4628365
Link To Document