Title :
Two-dimensional calculation of transient terminal currents in amorphous silicon thin-film transistors
Author :
Huang, J.S. ; Wu, C.H.
Author_Institution :
University of Missouri-Rolla
Keywords :
Amorphous silicon; Charge carrier density; Electron traps; Filling; Geometry; Insulation; Steady-state; Thin film transistors; Virtual colonoscopy; Voltage;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771121
