• DocumentCode
    287327
  • Title

    Avalanche capability of today´s power semiconductors

  • Author

    Borras, R. ; Aloisi, P. ; Shumate, D.

  • Author_Institution
    Motorola Semiconductors, Toulouse, France
  • fYear
    1993
  • fDate
    13-16 Sep 1993
  • Firstpage
    167
  • Abstract
    Power semiconductors are used to switch high currents in fractions of a second and therefore belong inherently to a world of voltage spikes. To avoid unnecessary breakdown voltage guardbands, new generations of semiconductors are now avalanche rugged and characterized in avalanche energy. This characterization is often far from application conditions and thus quite useless to the designer. It is easy to verify that an energy rating is not the best approach to a ruggedness quantification because of avalanche energy fluctuations with test conditions. A physical and thermal analysis of the failure mechanisms leads to a new characterization method generating easy-to-use data for safe designs. The short-term avalanche capability is discussed with an insight of the different technologies developed to meet these new ruggedness requirements
  • Keywords
    failure analysis; impact ionisation; power electronics; semiconductor device testing; semiconductor devices; thermal analysis; SOA; avalanche energy; breakdown voltage; characterization method; failure mechanisms; power semiconductors; ruggedness quantification; safe operating areas; short-term avalanche capability; thermal analysis;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Electronics and Applications, 1993., Fifth European Conference on
  • Conference_Location
    Brighton
  • Type

    conf

  • Filename
    265043