DocumentCode
287327
Title
Avalanche capability of today´s power semiconductors
Author
Borras, R. ; Aloisi, P. ; Shumate, D.
Author_Institution
Motorola Semiconductors, Toulouse, France
fYear
1993
fDate
13-16 Sep 1993
Firstpage
167
Abstract
Power semiconductors are used to switch high currents in fractions of a second and therefore belong inherently to a world of voltage spikes. To avoid unnecessary breakdown voltage guardbands, new generations of semiconductors are now avalanche rugged and characterized in avalanche energy. This characterization is often far from application conditions and thus quite useless to the designer. It is easy to verify that an energy rating is not the best approach to a ruggedness quantification because of avalanche energy fluctuations with test conditions. A physical and thermal analysis of the failure mechanisms leads to a new characterization method generating easy-to-use data for safe designs. The short-term avalanche capability is discussed with an insight of the different technologies developed to meet these new ruggedness requirements
Keywords
failure analysis; impact ionisation; power electronics; semiconductor device testing; semiconductor devices; thermal analysis; SOA; avalanche energy; breakdown voltage; characterization method; failure mechanisms; power semiconductors; ruggedness quantification; safe operating areas; short-term avalanche capability; thermal analysis;
fLanguage
English
Publisher
iet
Conference_Titel
Power Electronics and Applications, 1993., Fifth European Conference on
Conference_Location
Brighton
Type
conf
Filename
265043
Link To Document