High frequency Q-switched operation of a VCSEL with intracavity electroabsorption modulator

Author

van Eisden, J. ; Yakimov, M. ; Tokranov, V. ; Oktyabrsky, S. ; Mohammed, E.M. ; Young, I.A.

Author_Institution

Coll. of Nanoscale Sci. & Eng., Univ. at Albany, Albany, NY

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

We report on active Q-switching of AlGaAs/GaAs VCSELs with In_0.16Ga_0.84As MQW active region and absorber. Pulse widths of 40 ps at repetition rates of 4 GHz were measured at 5 dBm incident RF power.

Keywords

III-V semiconductors; Q-switching; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; laser beams; laser cavity resonators; laser variables measurement; optical pulse generation; pulse measurement; semiconductor lasers; surface emitting lasers; AlGaAs-GaAs; In_0.16Ga_0.84As MQW active region; Q-switching; VCSEL; frequency 4 GHz; intracavity electroabsorption modulator; pulse widths; time 40 ps; Laser mode locking; Optical pulses; Power lasers; Pulse measurements; Pulse modulation; Quantum well devices; Radio frequency; Space vector pulse width modulation; Surface emitting lasers; Vertical cavity surface emitting lasers; (140.0140) Lasers and laser optics; (250.7260) Vertical cavity surface emitting lasers; (320.5550) Pulses;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4628366

Filename

4628366