Title :
Device applications of beam crystallized silicon-on-insulators
Author_Institution :
Stanford University, Stanford, CA, USA
Abstract :
The properties of CW beam recrystallized thin polysilicon films on insulating substrates will be presented. MOSFET devices and simple ICs processed on this material have electrical characteristics similar to devices fabricated on single crystal material, offering significant promise for future applications.
Keywords :
Crystallization; Electron beams; Grain size; Laser beams; MOSFETs; Molecular beam epitaxial growth; Shape control; Silicon on insulator technology; Size control; Velocity control;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1982.1156287
