DocumentCode
2873311
Title
Measurement of intrinsic capacitances of MOS transistors
Author
Paulos, James ; Antoniadis, D. ; Tsividis, Yannis
Author_Institution
Massachusetts Institute of Technology, Cambridge, MA, USA
Volume
XXV
fYear
1982
fDate
10-12 Feb. 1982
Firstpage
238
Lastpage
239
Abstract
An electrometer/coulombmeter circuit technique to measure capacitance characteristics of the MOS transistor will be discussed. Experimental data for substrate capacitances, non-reciprocal elements and non-quasi-static effects, compared to theory, will be presented.
Keywords
Capacitance measurement; Capacitive sensors; Capacitors; Circuit testing; Feedback; Frequency; MOSFETs; Resistors; Semiconductor device measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1982.1156289
Filename
1156289
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