DocumentCode
2873425
Title
International Meeting for Future of Electron Devices, Kansai (IEEE Cat. No. 04EX829)
fYear
2004
fDate
26-28 July 2004
Abstract
The following topics are dealt with: nanoelectronics; wide band gap semiconductors; power electronic devices; characterization and testing technologies; compound semiconductors; III-V semiconductors; III-N semiconductors and related device technologies; surface treatments technologies and semiconductor reliability.
Keywords
nanoelectronics; power electronics; semiconductor device reliability; semiconductor device testing; surface treatment; wide band gap semiconductors; III-N semiconductors; III-V semiconductors; characterization technology; compound semiconductors; device technologies; nanoelectronics; power electronic devices; semiconductor reliability; surface treatments; testing technology; wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, 2004. International Meeting for
Conference_Location
Kyoto, Japan
Print_ISBN
0-7803-8423-7
Type
conf
DOI
10.1109/IMFEDK.2004.1566379
Filename
1566379
Link To Document