Title :
1.25 µm deep-groove-isolated self-aligned ECL circuits
Author :
Tang, Dong ; Solomon, Paul ; Tak Ning ; Isaac, R. ; Burger, Robert
Author_Institution :
IBM Research Center, Yorktown Heights, NY, USA
Abstract :
IN THIS PAPER we report the characteristics of 1.25pm ECL circuits with maximum speed of 114ps ata power dissipation of 4.9mW. Such performance is achieved through the combination of properly designed bipolar devices and an advanced bpolar technology featuring self-ali ed polysilicon-base contact and deep-groove device isolation??. The 1.25pm minimum feature size was defined using electron-beam lithography.
Keywords :
Bipolar transistors; Capacitance; Electron devices; Isolation technology; Logic circuits; MOSFETs; Switches; Very large scale integration;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/ISSCC.1982.1156298
