DocumentCode :
2873486
Title :
Polaritons in high-quality AlGaN based microcavities
Author :
Mitrofanov, Oleg ; Schmult, S. ; Manfra, Michael J. ; Sergent, A.M. ; Molnar, R.J.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
We discuss polariton formation in high-quality stress compensated crack-free A10.13Ga0.87N/A10.56Ga0.44 N microcavities grown by molecular beam epitaxy on thick GaN templates. Microcavity design for studies of the strong coupling regime in GaN will be discussed.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; integrated optics; micro-optics; microcavities; molecular beam epitaxial growth; polaritons; semiconductor growth; AlGaN; GaN; GaN templates; crack-free microcavities; high-quality microcavities; microcavity design; molecular beam epitaxy; polaritons; stress compensated microcavities; strong coupling regime; Aluminum gallium nitride; Gallium nitride; Microcavities; Molecular beam epitaxial growth; 230.5750; 300.6470;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4628379
Filename :
4628379
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2873486
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