DocumentCode
2873555
Title
VLSI lithography for the 80s
Author
Joy, R. ; Terman, L.
Author_Institution
IBM Corp., Hopwell Junction, NY, USA
Volume
XXV
fYear
1982
fDate
10-12 Feb. 1982
Firstpage
222
Lastpage
223
Abstract
Progress in VLSI depends upon continuing improvement in lithography. While optical lithography is dominant at present, the movement to micron and sub-mlcron resolution with commensurate overlay presents severe challenges. Already, limitations due to the wavelength of light are being encountered, and there are proponents of short wavelength radiation technologies using x-ray and E-beams. The panel will discuss the alternatives and compare their capabilities and limitations.
Keywords
Circuits; Electron beams; Engineering management; Lithography; Optical refraction; Research and development management; Resists; Technology management; Throughput; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1982.1156305
Filename
1156305
Link To Document