DocumentCode :
2873567
Title :
High effective channel mobility back junction SiGe pmos: theory of operation
Author :
Niu, G.F. ; Ruan, G. ; Tang, T.A. ; Kwor, Richard
Author_Institution :
Fudan University
fYear :
1994
fDate :
1994
Firstpage :
45695
Lastpage :
46790
Keywords :
Dielectric constant; Doping; Gaussian channels; Gaussian processes; Germanium silicon alloys; MOSFET circuits; Numerical simulation; Silicon germanium; Springs; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771138
Filename :
771138
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2873567
بازگشت