Title :
Interface roughness effects on the properties of resonant tunneling hot electron transistor
Author :
Sheng, Hanyu ; Chua, Soo Jin
Author_Institution :
National University of Singapore
Keywords :
Atomic layer deposition; Diodes; Electrons; Gallium arsenide; Interference; Particle scattering; Resonance; Resonant tunneling devices; Temperature; Voltage;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771149
