DocumentCode :
2873661
Title :
High drain current peak-to-valley ratios in strained In0.15Ga0.85As channel real-space transfer transistors
Author :
Lai, JiunTsuen ; Joseph Ya-min Lee
fYear :
1994
fDate :
1994
Firstpage :
44625
Lastpage :
45721
Keywords :
FETs; Fabrication; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Ohmic contacts; Substrates; Temperature; Virtual colonoscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771155
Filename :
771155
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2873661
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