• DocumentCode
    2873661
  • Title

    High drain current peak-to-valley ratios in strained In0.15Ga0.85As channel real-space transfer transistors

  • Author

    Lai, JiunTsuen ; Joseph Ya-min Lee

  • fYear
    1994
  • fDate
    1994
  • Firstpage
    44625
  • Lastpage
    45721
  • Keywords
    FETs; Fabrication; Gallium arsenide; Indium gallium arsenide; Molecular beam epitaxial growth; Ohmic contacts; Substrates; Temperature; Virtual colonoscopy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771155
  • Filename
    771155
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2873661