A high resolution, stictionless, CMOS compatible SOI accelerometer with a low noise, low power, 0.25 μm CMOS interface

Author

Amini, Babak Vukili ; Pourkamali, Siavash ; Ayazi, Farrokh

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2004

fDate

2004

Firstpage

572

Lastpage

575

Abstract

The implementation and characterization of a high sensitivity silicon-on-insulator (SOI) capacitive microaccelerometer with sub-25 μg resolution is presented. The in-plane accelerometers were fabricated on 40 μm thick SOI substrates using a two-mask, dry-release low temperature process comprising of three plasma etching steps. The fabricated devices were interfaced with a high resolution, low noise and low power switched-capacitor integrated circuit (IC) fabricated in a 2.5 V 0.25 μm N-well CMOS process. The measured sensitivity is 0.2 pF/g and the output noise floor is 20 μg/√Hz. The total power consumption is 3 mW.

Keywords

CMOS integrated circuits; accelerometers; micromechanical devices; silicon-on-insulator; sputter etching; switched capacitor networks; 2.5 V; 3 mW; 40 micron; SOI substrates; Si; accelerometers; capacitive microaccelerometer; complementary metal oxide semiconductor; high resolution stictionless CMOS compatible SOI accelerometer; low noise low power CMOS interface; mask; output noise floor; plasma etching; silicon on insulator; switched capacitor integrated circuit; Accelerometers; CMOS integrated circuits; Dry etching; Integrated circuit noise; Plasma applications; Plasma devices; Plasma measurements; Plasma temperature; Silicon on insulator technology; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

Print_ISBN

0-7803-8265-X

Type

conf

DOI

10.1109/MEMS.2004.1290649

Filename

1290649