DocumentCode :
2873781
Title :
High peak-to-valley current ratio In
0.3
Ga
0.7
As/In
0.29
Al
0.71
As resonant tunneling diodes grown on GaAs
Author :
Hwang, H.P. ; Shieh, J.L. ; Lin, R.M. ; Chyi, J.-I. ; Tu, S.L. ; Peng, C.K. ; Yang, S.J.
Author_Institution :
National Central University
fYear :
1994
fDate :
1994
Firstpage :
12484
Lastpage :
13580
Keywords :
Current density; Diodes; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Ohmic contacts; Resonant tunneling devices; Substrates; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771193
Filename :
771193
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2873781
