• DocumentCode
    2873781
  • Title

    High peak-to-valley current ratio In0.3Ga0.7As/In0.29Al0.71As resonant tunneling diodes grown on GaAs

  • Author

    Hwang, H.P. ; Shieh, J.L. ; Lin, R.M. ; Chyi, J.-I. ; Tu, S.L. ; Peng, C.K. ; Yang, S.J.

  • Author_Institution
    National Central University
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    12484
  • Lastpage
    13580
  • Keywords
    Current density; Diodes; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Ohmic contacts; Resonant tunneling devices; Substrates; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771193
  • Filename
    771193
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2873781