Integrated FDTD analysis of microwave solid-state circuit

Traditional extended FDTD method incorporating the lumped-models or stable models of active devices may no longer give high precision in the analysis of microwave active circuits when the operating frequencies become higher. An integrated FDTD method combining the drift-diffuse transient models of semiconductor devices are presented in this paper. To demonstrate its efficiency and validity, this method is applied to analyze a microwave transistor circuit. It is shown that this method gives better precision than the traditional extended methods with the lumped-models and stable models.