Title :
Numerical analysis of the gate lag phenomena in GaAs MESFET´s
Author :
Lo, S.H. ; Lee, C.P.
Author_Institution :
National Chiao Tung University
Keywords :
Charge carrier processes; Electron traps; Gallium arsenide; MESFETs; Numerical analysis; Ohmic contacts; Pulse measurements; Pulse width modulation; Space vector pulse width modulation; Steady-state;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771196
