• DocumentCode
    2873852
  • Title

    Al2O3 formation by wet oxidation of AlAs for GaAs MOS device

  • Author

    Lee, Yong-Soo ; Lee, Yong-Hyun ; Lee, Jae- Jin ; Lee, Hae-Kwon ; Lee, Jung-Hee

  • Author_Institution
    Kyungpook National University
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    39906
  • Lastpage
    41002
  • Keywords
    Capacitance-voltage characteristics; Chemicals; Dielectric substrates; Frequency estimation; Gallium arsenide; Kinetic energy; MOS devices; Molecular beam epitaxial growth; Oxidation; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771200
  • Filename
    771200
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2873852