MOS interface properties and MOSFET performance on 4H-SiC{0001} and (11-20) processed by N2O oxidation

Silicon carbide (SiC) has attracted increasing attention as a promising wide bandgap semiconductor projected to high-power and high-temperature electronics. Although SiC MOSFETs are recognized as ideal power switches, SiC MOSFETs have still suffered from low effective channel mobility. In recent years, post-oxidation nitridation in an NO ambience is widely used to improve SiO₂/4H-SiC(0001) interface properties and thereby to increase effective channel mobility of MOSFETs as presented in S. Dimitrijev et al. (1997) and G. Y. Chung et al. (2001). Direct oxidation with N₂O has been also proposed as an alternative to form the "nitrided" MOS interface for the safety reason according to L. A. Lipkin et al. (2002). In this study, the interface state density and MOSFET performance have been investigated on 4H-SiC(0001), (000-1), and (11-20) stated in H. Yano et al. (1999) by using N₂O oxidation. Effects of doping concentration in the p-body on MOSFET performance are discussed.