Title :
Growth and investigation of quaternary III-III-III-V InGaAlAs alloy layers on InP by molecular beam epitaxy
Author :
Feng, Z.C. ; Chua, S.J. ; Raman, A. ; Williams, K.D.
Author_Institution :
National University of Singapore
Keywords :
Indium phosphide; Infrared spectra; Lattices; Molecular beam epitaxial growth; Photonic band gap; Raman scattering; Semiconductor process modeling; Spectroscopy; Substrates; Temperature;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771204
