A low distortion 38 GHz-band high power MMIC amplifier

Author

Murase, Y. ; Kasahara, K. ; Yamanoguchi, K. ; Matsunaga, K.

Author_Institution

Syst. Devices Res. Labs., NEC Corp., Sagamihara, Japan

fYear

2004

fDate

26-28 July 2004

Firstpage

55

Lastpage

56

Abstract

The growth of the point to point and the point to multipoint radio markets has produced a demand for high power, low distortion and cost effective amplifier at quasi-millimeter-wave. This paper describes a GaAs-based monolithic microwave integrated circuit (MMIC) amplifier having watt-level power performance, excellent third order intermodulation distortion (IMD3) characteristic at 38 GHz-band for various communication system applications. We have developed GaAs-based double-doped heterojunction FETs (HJFET) for quasi-millimeter-wave MMIC amplifier, using highly-uniform 0.2 μm WSi-gate process on 5-inch GaAs wafer.

Keywords

III-V semiconductors; MMIC power amplifiers; gallium arsenide; high electron mobility transistors; intermodulation distortion; tungsten compounds; 0.2 micron; 38 GHz; 5 inch; WSi-GaAs; heterojunction FET; high power MMIC amplifier; intermodulation distortion; point to multipoint radio; point to point radio; Application specific integrated circuits; Costs; High power amplifiers; Intermodulation distortion; MMICs; Microwave FET integrated circuits; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, 2004. International Meeting for

Print_ISBN

0-7803-8423-7

Electronic_ISBN

0-7803-8424-5

Type

conf

DOI

10.1109/IMFEDK.2004.1566405

Filename

1566405