DocumentCode
2873917
Title
High quality low-temperature GaAs film grown by conventional metalorganic chemical vapor deposition
Author
Wei-Kuo Chen
Author_Institution
Chiao-Tung University
fYear
1994
fDate
1994
Firstpage
47216
Lastpage
11787
Keywords
Chemical vapor deposition; Crystallization; Doping profiles; Epitaxial growth; Gallium arsenide; Heating; Inductors; MOCVD; Molecular beam epitaxial growth; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type
conf
DOI
10.1109/EDMS.1994.771209
Filename
771209
Link To Document