Title :
Modeling of MOSFETs for CMOS RF-IC Design
Author :
Lu, Guizhu ; Shi, Zhiyuan ; Li, Gary
Author_Institution :
Dept. of Electron. Eng., Dongguan Univ. of Technol., Dongguan
Abstract :
High-frequency (HF) modeling of MOSFETs for radio-frequency (RF) integrated circuit (IC) design is discussed. Modeling of the quasi-static (QS) and non-quasi-static (NQS) effect is discussed. Through the simulation results of the QS and NQS model with the comparison to the measured data, it is proved that the inclusion of the NQS effect would be a desirable feature for a RF model.
Keywords :
CMOS integrated circuits; MOSFET; field effect MIMIC; integrated circuit design; semiconductor device models; CMOS RF-IC design; MOSFET modeling; high-frequency modeling; nonquasistatic effect; quasistatic effect; radio-frequency integrated circuit design; ultra HF applications; CMOS integrated circuits; Data mining; Design engineering; Hafnium; Integrated circuit modeling; MOSFETs; Radio frequency; Radiofrequency integrated circuits; Semiconductor device modeling; Voltage;
Conference_Titel :
Anti-counterfeiting, Security, Identification, 2007 IEEE International Workshop on
Conference_Location :
Xiamen, Fujian
Print_ISBN :
1-4244-1035-5
Electronic_ISBN :
1-4244-1035-5
DOI :
10.1109/IWASID.2007.373697
