مرکز منطقه ای اطلاع رساني علوم و فناوري - Memory cell technology for high performance SRAMs

DocumentCode :

2873976

Title :

Memory cell technology for high performance SRAMs

Author :

Ikeda, Shuji

Author_Institution :

Hitachi, Ltd.

fYear :

1994

fDate :

1994

Firstpage :

37012

Lastpage :

38108

Keywords :

Fabrication; Low voltage; Process design; Silicon; Stability; Stress; Substrates; Temperature measurement; Testing; Thin film transistors;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International

Type :

conf

DOI :

10.1109/EDMS.1994.771211

Filename :

771211

Link To Document :