مرکز منطقه ای اطلاع رساني علوم و فناوري - Robust n<sup>+</sup>/p<sup>+</sup> dual-gate cmos device fabrication using dopant drive-out technique

DocumentCode :

2873989

Title :

Robust n⁺/p⁺ dual-gate cmos device fabrication using dopant drive-out technique

Author :

Yu, Douglas C H ; Lee, K.H. ; Kornblit, A. ; Fu, C.C. ; Yan, R.H. ; Lin, H.D.

Author_Institution :

AT&T Bell Labs

fYear :

1994

fDate :

1994

Firstpage :

38474

Lastpage :

38839

Keywords :

Annealing; Boron; Etching; Implants; MOS devices; MOSFET circuits; Robustness; Testing; Thermal resistance; Tin;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International

Type :

conf

DOI :

10.1109/EDMS.1994.771212

Filename :

771212

Link To Document :