DocumentCode :
2874025
Title :
Suppression of boron penetration in BF2+ -implanted poly-Si gate using N2O oxide and stacked amorphous-silicon (SAS) structure
Author :
Chao, T.S. ; Chu, C.H. ; Wang, C.F. ; Ho, K.J. ; Lei, T.F. ; Lee, C.-L.
Author_Institution :
National Nano Device Laboratory
fYear :
1994
fDate :
1994
Firstpage :
41033
Lastpage :
42128
Keywords :
Boron; Capacitance measurement; Crystallization; Dielectrics; Grain size; MOS capacitors; MOSFET circuits; Semiconductor films; Silicon; Synthetic aperture sonar;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
Type :
conf
DOI :
10.1109/EDMS.1994.771214
Filename :
771214
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2874025
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