• DocumentCode
    2874035
  • Title

    A new buffered p+ poly-gate for suppression of boron penetration effect

  • Author

    Lin, Chih Yung ; Chang, Chun-Yen ; Chou, Jih Wen ; Pan, Hong-Tsz ; Lin, Chih Hung ; Ko, Joe

  • Author_Institution
    National Chiao Tung University
  • fYear
    1994
  • fDate
    1994
  • Firstpage
    42494
  • Lastpage
    43589
  • Keywords
    Amorphous silicon; Boron; CMOS technology; Capacitance-voltage characteristics; Electrodes; Etching; Laboratories; MOSFET circuits; Microelectronics; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
  • Type

    conf

  • DOI
    10.1109/EDMS.1994.771215
  • Filename
    771215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874035