Low temperature growth of GaNAs toward creation of GaNAsBi

In this study, MBE growth of GaN_yAs_1-y at a low T_sub was studied based on X-ray diffraction (XRD) and secondary ion mass spectroscopy (SIMS). Recently, GaN_yAs_1-yBi_x has been successfully created on the basis of both this study and MBE growth of GaAs_1-xBi_x. GaN_yAs_1-y was grown on a GaAs(100) substrate using solid sources of Ga, As and Bi. Activated nitrogen generated from N₂ gas in rf plasma was used as a nitrogen source. The GaAs substrate was pre-treated by thermal flush at T_sub of 600°C, followed by GaAs growth at T_sub of 500°C. GaN_yAs_1-y layers with a thickness approximately 500 nm were grown on the GaAs layer at T_sub ranging 260°C and 400°C. CaN_yAs_1-y epilayers grown at F_sub ranging 260°C and 400°C showed XRD patterns with clear thickness fringes, which indicates that good crystal quality was achieved even though the epilayer was grown at T_sub of 260°C. To clarify lattice deformation of GaN_yAs_1-yepilayers, we carried out XRD measurements regarding (400) and (511) diffractions.