DocumentCode
2874052
Title
SOS MOSFETs for monolithic microwave ICs
Author
Yu, Son-Cheol ; Eshbach, J. ; Ying Hwang ; Naster, R.
Author_Institution
General Electric Research/Development, Schnectady, NY, USA
Volume
XXV
fYear
1982
fDate
10-12 Feb. 1982
Firstpage
132
Lastpage
133
Abstract
Large gate-width SOS MESFETs, operated at 3GHz, with output power densities of 175mW/mm,ηdrain = 51% and ηpower-added = 31%, will be described. Device impedances were measured versus power level.
Keywords
Electrical resistance measurement; MESFETs; MOSFETs; Microstrip; Microwave devices; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1982.1156332
Filename
1156332
Link To Document