DocumentCode :
2874093
Title :
Effect on the electrical properties of HfO2 films grown by metal-organic molecular beam epitaxy
Author :
Kim, Mvouna-Seok ; Ko, Young-Don ; Moon, Tae-Hyoung ; Jeong, Min-Chang ; Myoung, Jae-min ; Yun, Ilgu
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
fYear :
2004
fDate :
26-28 July 2004
Firstpage :
77
Lastpage :
78
Abstract :
The characteristics of the HfO2 dielectric layer on the p-type Si substrate by MOMBE process have been investigated. The electrical properties, surface morphology, and relative concentration of HfO2 films could be tuned by O2/Ar ratio.
Keywords :
dielectric thin films; elemental semiconductors; hafnium compounds; interface states; molecular beam epitaxial growth; silicon; surface morphology; surface states; HfO2; electrical properties; metal-organic molecular beam epitaxy; surface morphology; Argon; Capacitance-voltage characteristics; Current density; Dielectric constant; Dielectric substrates; Hafnium oxide; Leakage current; Molecular beam epitaxial growth; Surface morphology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, 2004. International Meeting for
Print_ISBN :
0-7803-8423-7
Electronic_ISBN :
0-7803-8424-5
Type :
conf
DOI :
10.1109/IMFEDK.2004.1566416
Filename :
1566416
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2874093
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