• DocumentCode
    2874118
  • Title

    Low threshold current 850nm surface plasmon VCSEL with sub-micron metal hole arrays

  • Author

    Onishi, Toshikazu ; Tanigawa, Tatsuya ; Ueda, Tetsuzo ; Ueda, Daisuke

  • Author_Institution
    Semicond. Device Res. Center, Matsushita Electr. Ind. Co., Ltd., Nagaokakyo
  • fYear
    2006
  • fDate
    21-26 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    850 nm AlGaAs-based VCSELs with sub-micron hole arrays on the top of the DBR mirror are presented. The VCSEL exhibits lower threshold current down to 0.5 mA with enhanced optical output power by surface plasmon resonance at the Ag/SiO2 interface consisting the sub-micron metal hole arrays.
  • Keywords
    III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; silicon compounds; surface emitting lasers; surface plasmons; Ag-SiO2; AlGaAs; DBR mirror; current 0.5 mA; sub-micron metal hole arrays; surface plasmon VCSEL; Distributed Bragg reflectors; Mirrors; Optical arrays; Optical surface waves; Plasmons; Power generation; Resonance; Silicon compounds; Threshold current; Vertical cavity surface emitting lasers; (140.5960) Semiconductor lasers; (250.7260) Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
  • Conference_Location
    Long Beach, CA
  • Print_ISBN
    978-1-55752-813-1
  • Electronic_ISBN
    978-1-55752-813-1
  • Type

    conf

  • DOI
    10.1109/CLEO.2006.4628421
  • Filename
    4628421
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874118