Title :
Low threshold current 850nm surface plasmon VCSEL with sub-micron metal hole arrays
Author :
Onishi, Toshikazu ; Tanigawa, Tatsuya ; Ueda, Tetsuzo ; Ueda, Daisuke
Author_Institution :
Semicond. Device Res. Center, Matsushita Electr. Ind. Co., Ltd., Nagaokakyo
Abstract :
850 nm AlGaAs-based VCSELs with sub-micron hole arrays on the top of the DBR mirror are presented. The VCSEL exhibits lower threshold current down to 0.5 mA with enhanced optical output power by surface plasmon resonance at the Ag/SiO2 interface consisting the sub-micron metal hole arrays.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; silicon compounds; surface emitting lasers; surface plasmons; Ag-SiO2; AlGaAs; DBR mirror; current 0.5 mA; sub-micron metal hole arrays; surface plasmon VCSEL; Distributed Bragg reflectors; Mirrors; Optical arrays; Optical surface waves; Plasmons; Power generation; Resonance; Silicon compounds; Threshold current; Vertical cavity surface emitting lasers; (140.5960) Semiconductor lasers; (250.7260) Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628421
