Title :
Low temperature nitridation of PLCVD HfSixOy gate dielectrics using nitrogen radicals
Author :
Nakamura, Hideki ; Punchaipetch, Prakaipetch ; Yano, Hiroshi ; Hatayama, Tomoaki ; Uraoka, Yukiharu ; Fuyuki, Takashi ; Horii, Sadayoshi
Author_Institution :
Graduate Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan
Abstract :
The effect of nitrogen incorporation on polyatomic layer chemical vapor deposition (PLCVD) HfSixOy films was investigated. The nitrogen engineering of stacked film with different compositions was studied. The nitrogen profile was obtained from secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). The result confirms that we can control the nitrogen gradient in the film by varying the film compositions. The single layer and stacked HfSixOy and HfSixOyNz films show respectable electrical performance.
Keywords :
X-ray photoelectron spectra; atomic layer deposition; chemical vapour deposition; dielectric materials; hafnium compounds; nitridation; secondary ion mass spectroscopy; silicon compounds; X-ray photoelectron Spectroscopy; dielectrics; low temperature nitridation; nitrogen gradient; nitrogen profile; nitrogen radicals; polyatomic layer chemical vapor deposition; secondary ion mass spectroscopy; stacked film; Bonding; Capacitance; Capacitance-voltage characteristics; Dielectrics; Hafnium; Leakage current; Mass spectroscopy; Nitrogen; Semiconductor films; Temperature;
Conference_Titel :
Future of Electron Devices, 2004. International Meeting for
Print_ISBN :
0-7803-8423-7
Electronic_ISBN :
0-7803-8424-5
DOI :
10.1109/IMFEDK.2004.1566419
