Horizontal buried channels in monocristalline silicon

Author

De Sagazan, O. ; Denoual, M. ; Guil, P. ; Gaudin, D. ; Le Pioufle, B. ; Bonnaud, O.

Author_Institution

STMicroelectron., Rennes, France

fYear

2004

fDate

2004

Firstpage

661

Lastpage

664

Abstract

This paper reports horizontal buried channels in monocristalline silicon. Those channels are a few microns in width and height and several hundred microns long. The main applications for those buried channels are microfluidic networks for MEMS devices and cooling systems for integrated circuits. Their fabrication is based on integrated circuit standard processes such as selective monocristalline epitaxial growth and high temperature annealing. The major interest of the method is its compatibility with integrated circuit manufacturing technology.

Keywords

annealing; elemental semiconductors; epitaxial growth; integrated circuit manufacture; microfluidics; monolithic integrated circuits; semiconductor epitaxial layers; silicon; MEMS devices; Si; annealing; cooling systems; horizontal buried channels; integrated circuit standard processes; microfluidic networks; monocristalline epitaxial growth; monocristalline silicon; Annealing; Application specific integrated circuits; Cooling; Epitaxial growth; Fabrication; Integrated circuit manufacture; Microelectromechanical devices; Microfluidics; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)

Print_ISBN

0-7803-8265-X

Type

conf

DOI

10.1109/MEMS.2004.1290671

Filename

1290671