Title :
Profile angle control in SiO2 deep anisotropic dry etching for MEMS fabrication
Author :
Pavius, M. ; Hibert, C. ; Flückiger, Ph ; Renaud, Ph ; Rolland, L. ; Puech, M.
Author_Institution :
EPFL Centre of MicroNanoTechnol., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
Abstract :
We report a recent breakthrough to control profile angle for SiO2 deep anisotropic dry etching (SDADE). Our study reveals that gas residence time is the key parameter to control profile angle. Moreover, we show that it is possible to control profile angle, SiO2 etch rate and SiO2 selectivity to Si mask independently. Finally, the optimized process has the following performances: angle profile: 89.8°, SiO2 etch rate: 500 nm/min, selectivity: 18:1.
Keywords :
etching; micromechanical devices; silicon compounds; MEMS fabrication; SiO2; SiO2 deep anisotropic dry etching; SiO2 etch rate; microelectromechanical systems; profile angle control; Anisotropic magnetoresistance; Artificial intelligence; Dry etching; Fabrication; Helium; Inductors; Micromechanical devices; Pressure control; Radio frequency; Voltage;
Conference_Titel :
Micro Electro Mechanical Systems, 2004. 17th IEEE International Conference on. (MEMS)
Print_ISBN :
0-7803-8265-X
DOI :
10.1109/MEMS.2004.1290673
