• DocumentCode
    287426
  • Title

    Are paralleled IGBT modules or paralleled IGBT inverters the better choice?

  • Author

    Keller, Ch ; Tadros, Y.

  • Author_Institution
    Inst. fur Antriebstechnik und Leistungselektronik, AEG-AG, Berlin, Germany
  • fYear
    1993
  • fDate
    13-16 Sep 1993
  • Firstpage
    1
  • Abstract
    The power range which can be handled by PWM inverter applying available IGBT modules is about 150 kW. For higher power levels more than one device per bridge arm is necessary. In this paper, possibilities to enlarge the output power of IGBT inverters using parallel circuits are discussed. For direct parallel operation of advanced IGBT devices, difficulties are caused by the negative temperature coefficient of the on-state voltage. This includes a risk of thermal runaway or large imbalance of current sharing. The necessary conditions for a good current balance are deduced. Satisfying these conditions, direct paralleling of high current IGBT modules is possible for up to three devices. For higher power levels with a larger number of IGBT modules, it is not possible to achieve close thermal coupling which is essential for good on-state current sharing. For such high power-levels, paralleled inverters with electronic controlled current imbalance are advisable
  • Keywords
    equivalent circuits; insulated gate bipolar transistors; invertors; power transistors; pulse width modulation; 150 kW; PWM inverter; bridge arm; current sharing; negative temperature coefficient; on-state voltage; output power; paralleled IGBT inverters; paralleled IGBT modules; power transistors; thermal runaway;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Power Electronics and Applications, 1993., Fifth European Conference on
  • Conference_Location
    Brighton
  • Type

    conf

  • Filename
    265147