• DocumentCode
    2874365
  • Title

    Numerical simulation of MOS capacitance for a wide range of temperatures, impurity profiles and surface state densities

  • Author

    Jaeger, Richard C. ; Diehl, Stephan ; Gaensslen, F.

  • Author_Institution
    Auburn University, Auburn, AL, USA
  • Volume
    XXV
  • fYear
    1982
  • fDate
    10-12 Feb. 1982
  • Firstpage
    14
  • Lastpage
    15
  • Abstract
    This report will describe a method for the numerical evaluation of the capacitance of MOS structures as a function of temperature for arbitrary impurity profiles and surface state distributions.
  • Keywords
    Capacitance; Capacitance-voltage characteristics; Difference equations; Differential equations; Electrons; MOS devices; Numerical simulation; Poisson equations; Semiconductor impurities; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1982 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1982.1156349
  • Filename
    1156349
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2874365